At Broadline NSN, our aim is to help customers meet their operational requirements by supplying an extensive inventory of items that are available for procurement. On this page, you can explore a catalog of high-demand parts that are organized under the NSN 5961-00-878-2737, a unique identifier for products that are exceptionally popular. This includes top-requested part numbers like 1N1117, 1N1126, 5961PL1277837, 16101-002, A1047479-3, and numerous others, and you always have the option to pinpoint desired parts using our search engine and filters. We are the only independent distributor that operates with a NO CHINA SOURCING pledge, meaning that every item is sourced from a trusted NSN parts supplier on our Approved Vendor List (AVL).
As soon as you come across an item of interest, do not hesitate to submit a quote request by simply clicking on the “RFQ” button situated next to any offering. When completing an RFQ form, we ask that you include desired delivery dates and target price points, among other pertinent details about your needs for NSN 5961-00-878-2737. Within 15 minutes or less of submission, one of our industry experts will reach out with a customized quote that features competitive pricing and convenient shipping options. Get started today and see how we can serve as your strategic sourcing partner!
Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-878-2737 (008782737) |
NCB Code | USA (00) |
Manufacturer | Schuessler William, Military Specifications, Inspektorat Wsparcia Sil Zbrojnych, Dynalec Corporation, Harris Corporation, General Electric Company, Gilbert Engineering Co Inc, Air Force-Navy Aeronautical, Texas Instruments Inc, Raytheon Company, Honeywell International Inc, Joint Army-Navy Specifications, The Dewey Electronics Corporation, Electronic Transistors Corp, General Instrument Corporation, Army United States Department Of The, Fmc Technologies Inc, Thales Nederland Bv |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
1N1117 | schuessler william | semiconductor device diode | RFQ |
1N1126 | military specifications | semiconductor device diode | RFQ |
5961PL1277837 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
16101-002 | dynalec corporation | semiconductor device diode | RFQ |
A1047479-3 | harris corporation | semiconductor device diode | RFQ |
451634-3 | general electric company | semiconductor device diode | RFQ |
44B250191-003 | general electric company | semiconductor device diode | RFQ |
MIL-PRF-19500/260 | military specifications | semiconductor device diode | RFQ |
TM31 | gilbert engineering co inc | semiconductor device diode | RFQ |
1N1126A | air force-navy aeronautical | semiconductor device diode | RFQ |
1N255A | texas instruments inc | semiconductor device diode | RFQ |
4178600-179 | raytheon company | semiconductor device diode | RFQ |
451634-3 | honeywell international inc | semiconductor device diode | RFQ |
1N1125 | general electric company | semiconductor device diode | RFQ |
1N1125 | military specifications | semiconductor device diode | RFQ |
JAN1N1126A | joint army-navy specifications | semiconductor device diode | RFQ |
JAN1N1126A | military specifications | semiconductor device diode | RFQ |
50180-70 | the dewey electronics corporation | semiconductor device diode | RFQ |
1N1125 | electronic transistors corp | semiconductor device diode | RFQ |
1N1126A | joint army-navy specifications | semiconductor device diode | RFQ |
451634-3 | general instrument corporation | semiconductor device diode | RFQ |
MIL-S-19500/104 | military specifications | semiconductor device diode | RFQ |
9026811 | army united states department of the | semiconductor device diode | RFQ |
JAN1N1125 | military specifications | semiconductor device diode | RFQ |
S2030 | fmc technologies inc | semiconductor device diode | RFQ |
1N255 | military specifications | semiconductor device diode | RFQ |
322MT088P001 | raytheon company | semiconductor device diode | RFQ |
352250009971 | thales nederland bv | semiconductor device diode | RFQ |
VBE890-1N1126A | thales nederland bv | semiconductor device diode | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
AXGY | MOUNTING METHOD | THREADED STUD |
CCDG | OVERALL WIDTH ACROSS FLATS | 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS CASE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
THSD | THREAD SERIES DESIGNATOR | UNF |
TTQY | TERMINAL TYPE AND QUANTITY | 1 TAB,SOLDER LUG AND 1 THREADED STUD |
ABHP | OVERALL LENGTH | 0.405 INCHES MAXIMUM |
AKPV | MOUNTING FACILITY QUANTITY | 1 |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CQJX | NOMINAL THREAD SIZE | 0.190 INCHES |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS AND 400.0 MAXIMUM REVERSE VOLTAGE,PEAK |
CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 AMPERES MAXIMUM FORWARD CURRENT,DC AND-1.00 AMPERES MAXIMUM DRAIN CURRENT |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/104 GOVERNMENT SPECIFICATION |
Relevant Components for NSN - 5961-00-878-2737, 5961008782737 | ||||
5998-01-125-7416 (5998011257416) | 5998-01-374-9631 (5998013749631) | 5930-01-587-1236 (5930015871236) | 5930-00-412-4288 (5930004124288) | |
5995-01-670-0120 (5995016700120) | 5945-00-981-3594 (5945009813594) | 5985-01-073-1397 (5985010731397) | 5995-01-152-8260 (5995011528260) | |
5998-01-670-8072 (5998016708072) | 5998-00-915-6360 (5998009156360) | 5930-00-450-2865 (5930004502865) | 5930-01-347-1595 (5930013471595) | |
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